Comparison of Bulk vs SOI for low power low voltage CMOS imager

Afzalian, Aryan;Delatte, Pierre;Legat, Jean-Didier;Flandre, Denis
(2001) 2001 IEEE International SOI Conference — Location: Durango (Colorado/USA) (1.October.2001)

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Authors
  • Afzalian, AryanUCLouvain
    Author
  • Delatte, PierreUCLouvain
    Author
  • Legat, Jean-Didierorcid-logoUCLouvain
    Author
  • Author
Abstract
To compare bulk silicon and SOI technologies in the field of CMOS image sensors, the authors have developed an analytical model of an APS circuit and applied it to the design of a 50 frames per second 512x512 pixels imager.
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Afzalian, A., Delatte, P., Legat, J.-D., & Flandre, D. (2001). Comparison of Bulk vs SOI for low power low voltage CMOS imager. Proceedings of the 2001 IEEE International SOI Conference, p. 133-134. https://doi.org/10.1109/SOIC.2001.958022