Characterization of FD-SOI MOSFETs based on EKV model

Tomaszewski, Daniel;Flandre, Denis;Renaux, Christian;Grabiec, Piotr;Kucharski, Krzysztof;et.al.
(2005) MOS-AK Workshop 2005 — Location: Grenoble (France) (16.September.2005)

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  • Tomaszewski, DanielInstitute of Electron Technology, Warsaw
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  • Flandre, DenisUCLouvain
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  • Renaux, ChristianUCLouvain
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  • Grabiec, PiotrInstitute of Electron Technology, Warsaw
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  • Kucharski, KrzysztofInstitute of Electron Technology, Warsaw
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Abstract
The FD-SOI becomes an attractive choice for small research groups and SME’s, where research projects related to ASICs /MEMS integration are carried out. A MOSTXX application for MOSFET parameter extraction has been developed in the ITE as a cost effective tool for characterization of the CMOS ICs. Recently the EKV model, has been implemented. The paper reports results of EKV model parameter extraction for the FD-SOI MOSFETs. The analysis has been done using the MOSTXX software.
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Tomaszewski, D., Flandre, D., Renaux, C., Grabiec, P., Kociubinski, A., & Kucharski, K. (2005). Characterization of FD-SOI MOSFETs based on EKV model. Proceedings of the MOS-AK Workshop 2005. MOS-AK Workshop 2005, Grenoble (France). https://hdl.handle.net/2078.5/252815