Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs
(2011) Solid-State Electronics — Vol. 65-66, n° 1, p. 123-129 (2011)
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- Abstract
- We study here, using non-equilibrium Green’s function quantum simulations, the impact of dopant segregation (DS) on Schottky barrier (SB) nanoscale transistors for the implementation of ultimate CMOS with low series resistance and steep slope. Owing to their adequate multi-barrier structure, DS–SB transistor can present a gate modulated barrier resonant tunneling (MBRT) effect that allows them to have improved ION/IOFF ratio, even breach the kT/q subthreshold slope limit of classical MOSFET and therefore pave a way towards steep slope, low S/D resistance electronics. However, as shown here, these improved characteristics rely in a quite narrow window of dopant segregation parameters. Also sub-kT/q slopes are very sensitive to scattering. However, on the contrary to a standard MOSFET, electron–phonon scattering should improve on-current and ION/IOFF performances of SB-FETs and provide them with on-current levels comparable to standard MOSFETs.
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Citations
Afzalian, A., & Flandre, D. (2011). Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs. Solid-State Electronics, 65-66(1), 123-129. https://doi.org/10.1016/j.sse.2011.06.017 (Original work published 2011)