The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics

Pavanello, Marcelo Atonio;Martino, Joao Antonio;Dessard, Vincent;Flandre, Denis
(1999) Electrochemical Society 1999 — Location: Seattle (USA)

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  • Pavanello, Marcelo AtonioCentro Universitario da FEI
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  • Martino, Joao AntonioCentro Universitario da FEI
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  • Dessard, VincentUCLouvain
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  • Flandre, DenisUCLouvain
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Pavanello, M. A., Martino, J. A., Dessard, V., & Flandre, D. (1999). The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics. Proceedings of the Electrochemical Society 1999. Electrochemical Society 1999, Seattle (USA). https://hdl.handle.net/2078.5/252796