Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit
(2014) Solid-State Electronics — n° 97, p. 38-44 (2014)
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- Abstract
- This work details the harmful effect of parasitic resistances and capacitances on RF figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is demonstrated that intrinsically, UTBB device can reach very high cut-off frequency (fT) provided the reduction of parasitic elements. In addition, based on device simulation, we demonstrate that with appropriate configuration, Asymmetric Double Gate (ADG) regime provides a slight improvement of RF figures-of-merit.
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Citations
Md Arshad, M. K., Kilchytska, V., Emam, M., Andrieu, F., Flandre, D., & Raskin, J.-P. (2014). Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit. Solid-State Electronics, 97, 38-44. https://doi.org/10.1016/j.sse.2014.04.027 (Original work published 2014)