0.25 µm Fully-Depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with Partially-Depleted devices for High Frequency noise parameters
(2002) Solid-State Electronics — Vol. 46, n° 3, p. 379-386 (2002)
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- Abstract
- The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 μm fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 μm partially depleted (PD) devices. These FD devices present a state of the art NFmin of 0.8 dB and high Gass of 13 dB at 6 GHz, at View the MathML source, View the MathML source at 80 μm total gate width. A extrapolated maximum oscillation frequency of about 70 GHz has been obtained at View the MathML source and Jds=100 mA/mm.
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Citations
Vanmackelberg, M., Raynaud, C., Faynot, O., Pelloie, J.-L., Tabone, C., Grouillet, A., Martin, F., Dambrine, G., Picheta, L., Mackowiak, E., Llinares, P., Sevenhans, J., Compagne, E., Fletcher, G., Flandre, D., Dessard, V., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2002). 0.25 µm Fully-Depleted SOI MOSFET’s for RF mixed analog-digital circuits, including a comparison with Partially-Depleted devices for High Frequency noise parameters. Solid-State Electronics, 46(3), 379-386. https://doi.org/10.1016/S0038-1101(01)00120-4 (Original work published 2002)