Investigation of Floating Body Effects on SOI MOSFET Gate Tunneling Currents
(2003) 4th European Workshop on ULtimate Integration of Silicon (ULIS 2003) — Location: Udine (Italy) (20.March.2003)
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- Authors
- Abstract
- Study of particular gate current behaviour in SOI MOSFET
- Affiliations
Citations
Bawedin, M., Estrada, M., & Flandre, D. (2003). Investigation of Floating Body Effects on SOI MOSFET Gate Tunneling Currents. Proceedings of the 4th European Workshop on ULtimate Integration of Silicon (ULIS 2003), 45-48. https://hdl.handle.net/2078.5/252790