Performance of Ultra-Low-Power SOI CMOS Diodes Operating at Low Temperatures
(2011) 219th ECS Meeting — Location: Montréal (Canada) (1.May.2011)
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- Authors
- Abstract
- In this work the low temperature performance of ultra-low-power SOI CMOS diodes is presented. Experimental measurements performed in fabricated devices from 148K to 373K show that the temperature lowering can promote a significant leakage current reduction and increase of the forward current. Two-dimensional numerical simulations are used to extend the studied temperature range and analyze the doping concentration influence on the low temperature operation of these diodes.
- Affiliations
Centro Universitário da FEI Electrical Engineering Department
Citations
De Souza, M., Rue, B., Flandre, D., & Pavanello, M. A. (2011). Performance of Ultra-Low-Power SOI CMOS Diodes Operating at Low Temperatures. Proceedings of the 219th ECS Meeting. 219th ECS Meeting, Montréal (Canada). https://hdl.handle.net/2078.5/252786