Electrical characterization and special properties of FinFET structures

Rudenko, Tamara;Kilchytska, Valeriya;Collaert, N.;Nazarov, A.;Flandre, Denis;et.al.
(2007) Nanoscaled Semiconductor-on-Insulator Structures and Devices — ISBN: [978-1-4020-6378-7], 199-220, published

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Authors
  • Rudenko, TamaraLashkaryov Institute of Semiconductor Physics (ISP), Kyiv
    Author
  • Kilchytska, ValeriyaUCLouvain
    Author
  • Collaert, N.IMEC
    Author
  • Nazarov, A.National Academy of Sciences of Ukraine
    Author
  • Flandre, DenisUCLouvain
    Author
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Abstract
This paper presents a review into the experimental studies of the effective channel mobility and intrinsic gate leakage current in triple-gate FinFET structures with doped- and undoped-channels and different gate stacks. The characteristics of narrow-fin devices are studied as compared to those of quasi-planar (very-wide fin) devices, and as a function of the fin width. Special features in the behavior of narrow FinFETs are analyzed.
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Rudenko, T., Kilchytska, V., Collaert, N., Nazarov, A., Jurczak, M., & Flandre, D. (2007). Electrical characterization and special properties of FinFET structures. In Nanoscaled Semiconductor-on-Insulator Structures and Devices (pp. 199-220). S. Hall, A.N. Nazarov, V.S. Lysenko. https://hdl.handle.net/2078.5/252784