Gm/Id Method for Threshold Voltage Extraction Applicable in Advanced MOSFETs with nonlinear behavior above threshold
(2010) IEEE Electron Device Letters — Vol. 31, n° 9, p. 930-932 (2010)
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- Abstract
- A method is proposed for determining the threshold voltage in a MOSFET, based on the derivative of the gm/Id ratio with respect to the gate voltage, which theoretically originates from the unified charge-control model similar to the capacitance-derivative method. This yields threshold voltages significantly less affected by gate-voltage-dependent mobility and series resistance than linear-extrapolation techniques. Moreover, it is more physically adequate in the case of advanced MOSFETs with ultrathin dielectrics, thin SOI body, or double gate operation, featuring a gradual transition from the exponential to linear charge control. The robustness of the method is experimentally verified on FinFETs with different lengths.
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Citations
Flandre, D., Kilchytska, V., & Rudenko, T. (2010). Gm/Id Method for Threshold Voltage Extraction Applicable in Advanced MOSFETs with nonlinear behavior above threshold. IEEE Electron Device Letters, 31(9), 930-932. https://doi.org/10.1109/LED.2010.2055829 (Original work published 2010)