0.15µm Fully Depleted SOI for Mixed-Signal Applications up to 250°C: Are We Approaching the Limits of Device Scaling for High-Temperature Electronics ?

Vancaillie, Laurent;Kilchytska, Valeriya;Delatte, Pierre;Matsuhashi, H.;Flandre, Denis;et.al.
(2003) 2003 International Conference on High Temperature Electronics (HITEN 2003) — Location: Oxford (United Kingdom) (8.July.2003)

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Vancaillie, L., Kilchytska, V., Delatte, P., Matsuhashi, H., Ichikawa, F., & Flandre, D. (2003). 0.15µm Fully Depleted SOI for Mixed-Signal Applications up to 250°C: Are We Approaching the Limits of Device Scaling for High-Temperature Electronics ? In Johnston C., Vermessan O., Crossley A. (ed.), Proceedings of the 2003 International Conference on High Temperature Electronics (HITEN 2003) (pp. 127-132). https://hdl.handle.net/2078.5/252774