Compact Model for Single Event Transients and Total Dose Eects at High Temperatures for Partially Depleted SOI MOSFETs

Alvarado Pulido, José Joaquin;Kilchytska, Valeriya;Boufouss, El Hafed;Flandre, Denis
(2010) 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010) — Location: Gaeta (11.October.2010)

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Compact Model for Single Event Transients and Total Dose Eects at High Temperatures for Partially Depleted SOI MOSFETs
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Alvarado Pulido, J. J., Kilchytska, V., Boufouss, E. H., & Flandre, D. (2010). Compact Model for Single Event Transients and Total Dose Eects at High Temperatures for Partially Depleted SOI MOSFETs. Proceedings of the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010). 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), Gaeta. https://hdl.handle.net/2078.5/252772