Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures
(1998) Engineering Foundation Conference on High Temperature Electronic Materials, Devices and Sensors — Location: San Diego (USA) (22.February.1998)
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- Abstract
- We have performed low-frequency 1/f noise measurements on thin-film SOI n-MOSFETs up to 250°C using a dedicated set-up. We show the superiority of thin-film fully-depleted (FD) SOI n-MOSFETs versus partially-depleted (PD) devices from a noise perspective over temperature. We observe the constancy of 1/f noise with increasing temperature when the device is FD, and observe a new noise contribution which can affect the integrated input referred noise under certain conditions. A first-order explanation is proposed for this additional noise. Results are then compared to the input noise measured on a single stage OTA.
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Citations
Dessard, V., Eggermont, J.-P., & Flandre, D. (1998). Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures. Proceedings of the Engineering Foundation Conference on High Temperature Electronic Materials, Devices and Sensors. Engineering Foundation Conference on High Temperature Electronic Materials, Devices and Sensors, San Diego (USA). https://doi.org/10.1109/HTEMDS.1998.730657