Effect of high-energy neutrons on MuGFETs
(2010) 5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009) — Location: Chalmers Univ Technol, Gothenburg (Sweden) (19.January.2009)
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- This paper investigates, for the first time. the influence of high-energy neutrons on Multiple-Gate FETs (MuGFETs) with various gate lengths and fin widths Neutron-induced degradation is addressed through the variation of major device parameters such as threshold voltage, subthreshold slope, maximum transconductance and DIBL We demonstrate that high-energy neutrons result in total-dose effects largely similar to those caused by gamma- and proton-irradiations It is shown that, contrarily to the generally-believed immunity to irradiation, very short-channel MuGFETs can become extremely sensitive to the total-dose effect. The possible reasons of such length-dependent neutron-induced degradation are discussed and finally related to gate edges (C) 2009 Elsevier Ltd All rights reserved
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Kilchytska, V., Flandre, D., Alvarado, J., Collaert, N., Rooyakers, R., Militaru, O., & Berger, G. (2010). Effect of high-energy neutrons on MuGFETs. Solid-State Electronics, 54(2), 196-204. https://doi.org/10.1016/j.sse.2009.12.019 (Original work published 2010)