Investigation of single and double gate SOI MOSFETs in Accumulation Mode for enhanced performances and reduced technological drawbacks

Rauly, E.;Iniguez, B.;Flandre, Denis;Raynaud, C.
(2000) ESSDERC 2000. Proceedings of the 30th European Solid-State Device Research Conference — Location: Cork (Ireland) (11.September.2000)

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  • Rauly, E.
    Author
  • Iniguez, B.
    Author
  • Flandre, DenisUCLouvain
    Author
  • Raynaud, C.
    Author
Abstract
The behavior of single (SG) and double gate (DG) Accumulation Mode (AM) SOI MOSFETs is thoroughly investigated. These devices present some advantages over Inversion Mode (IM) devices concerning transconductance, easiness of fabrication and parasitic effects. We have observed, from experimental results and 2-D simulations that the short channel effects such as DIBL are substantially reduced in the volume accumulation regime, being even lower in thin-film DG AM SOI MOSFETs than in IM DG SOI devices. The potential of thin-film AM SOI MOS transistors down to sub-0.1 mu m technologies has been demonstrated.
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Rauly, E., Iniguez, B., Flandre, D., & Raynaud, C. (2000). Investigation of single and double gate SOI MOSFETs in Accumulation Mode for enhanced performances and reduced technological drawbacks. In Lane, W.A.; Crean, G.M.; McCabe, F.A.; Grunbacher, H.; (ed.), ESSDERC 2000. Proceedings of the 30th European Solid-State DeviceResearch Conference (pp. 540-543). Frontier group. https://hdl.handle.net/2078.5/252741