Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel

Burignat, S.;Flandre, Denis;Arshad, M. K.;Kilchytska, Valeriya;Raskin, Jean-Pierre;et.al.
(2010) 5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009) — Location: Chalmers Univ Technol, Gothenburg(Sweden) (5.May.2010)

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Abstract
This paper aims at presenting a detailed and comprehensive study of the influence of space-charge condition at the substrate/BOX interface. as a function of the gate length and substrate bias. oil both the front threshold voltage (V-thr,) and subthreshold slope (S), for sub-32 nm Ultra-Thin Body (UTB) SOI MOSFETs with two different BOX thicknesses: either standard 145 mn (UTB) or thin 11.5 nm (UTB2). This Study details for the first time, the important impact of the substrate/BOX interface regime variations with gate length from 1 mu m clown to 25 nm, substrate bias and BOX thickness together, on the mean channel position into film and its related impact oil the electrical parameters V-thr and S Experimental results and conclusions are also completed and enlightened by ATLAS simulations and analytical modeling. (C) 2009 Elsevier Ltd. All rights reserved
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Burignat, S., Flandre, D., Arshad, M. K., Kilchytska, V., Andrieu, F., Faynot, O., & Raskin, J.-P. (2010). Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel. Solid-State Electronics, 54(2), 213-219. https://doi.org/10.1016/j.sse.2009.12.021 (Original work published 2010)