SOI current and voltage reference sources for applications up to 300°C
(1998) Fourth International High Temperature Conference (HITEC 1998) — Location: Albuquerque (USA) (14.June.1998)
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- Abstract
- This work presents the potential of fully-depleted SOI technology to implement current and voltage reference sources for very wide temperature range applications. Design of these reference sources is realized using device measurements. Implementation results show temperature coefficient better than 100 ppm from room temperature to 300°C.
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Citations
Eggermont, J.-P., Dessard, V., Vandooren, A., Flandre, D., & Colinge, J.-P. (1998). SOI current and voltage reference sources for applications up to 300°C. Proceedings of the Fourth International High Temperature Conference (HITEC 1998), 55-59. https://doi.org/10.1109/HITEC.1998.676761