Asymmetric self-cascode FD SOI nMOSFETs harmonic distortion at cryogenic temperatures
(2014) 11th International Workshop on Low Temperature Electronics (WOLTE 2014) — Location: Grenoble (France) (7.July.2014)
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AsymmetricSelf-CascodeFDSOInMOSFETsHarmonicDistortionatCryogenicTemperatures.pdf
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- Abstract
- This paper presents an analysis on the linearity of Asymmetric Self-Cascode (A-SC) of FD SOI nMOSGET transistors at cryogenic temperatures. This is achieved by evaluating experimental results of associations of transistors with various combinations of channel doping, obtained at temperatures ranging between liquid helium temperature (LHT, 4K) and room temperature (300K). It has been observed that A-SC presents better analog characteristics than the Symmetric Self-Cascode (S-SC) even at temperatures below 100K. The results show improved harmonic distortion at cryogenic temperatures and for structures composed by transistors with lower channel doping.
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Citations
d’Oliveira, L. M., Trevisoli, D., Pavanello, M. A., de Souza, M., Kilchytska, V., & Flandre, D. (2014). Asymmetric self-cascode FD SOI nMOSFETs harmonic distortion at cryogenic temperatures. 11th International Workshop on Low Temperature Electronics (WOLTE 2014), Grenoble (France). https://doi.org/10.1109/WOLTE.2014.6881025