Unified deep-submicron fully-depleted SOI MOSFET modeling for circuit simulation

Iniguez, Benjamin;Nève, Amaury;Flandre, Denis;Raynaud, C.
(1999) XIV Congreso de Diseño de Circuitos Integrados — Location: Palma (Spain) (November.1999)

Files

No attached file found for this publication.

Details

Authors
  • Iniguez, BenjaminUniversitat Rovira I Virgili
    Author
  • Nève, AmauryUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
  • Raynaud, C.UCLouvain
    Author
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Iniguez, B., Nève, A., Flandre, D., & Raynaud, C. (1999). Unified deep-submicron fully-depleted SOI MOSFET modeling for circuit simulation. Proceedings of the XIV Congreso de Diseño de Circuitos Integrados, 427-432. https://hdl.handle.net/2078.5/252708