Performance of gamma-irradiated Gate-All-Around SOI MOS OTA amplifiers
(1997) IEEE International SOI Conference 1997 — Location: Tenya Lodge (USA) (6.October.1997)
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- Abstract
- Gate-All-Around SOI MOSFETs are very promising for the fabrication of ultra rad-hard circuits. The specific structure of the GAA device allows to combine radiation hardness and the great technological potential of SOI technology, e.g. for low-voltage low-power or high temperature circuits. Up to now only few studies have been realized on rad-hard GAA analog circuits. Present work discusses the performances of GAA SOI Operational Transconductance Amplifier (OTA) implementations under γ-rays irradiation. The main OTA parameters, i.e. DC open-loop gain and gain-bandwidth product, have been investigated and correlated to the evolution of the Early voltage and the scaled transconductance of individual devices. The experiments were performed up to a total dose of 15 Mrad(Si) on two OTA architectures.
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Citations
Vandooren, A., Francis, P., Flandre, D., & Colinge, J.-P. (1997). Performance of gamma-irradiated Gate-All-Around SOI MOS OTA amplifiers. Proceedings of the IEEE International SOI Conference, 1997, 62-63. https://hdl.handle.net/2078.5/252706