Breaching the kT/q limit with dopant segregated Schottky barrier resonant tunneling MOSFETs: A computationnal studyAfzalian, Aryan;Flandre, Denis
FilesNo attached file found for this publication.DetailsAuthorsAfzalian, AryanUCLouvainAuthorFlandre, DenisUCLouvainAuthorAffiliationsUCLouvainSST/ICTM/ELEN - Pôle en ingénierie électriqueShow moreCitations