Potential of surface accumulation mode for deep-submicron fully-depleted SOI CMOS technologies
(2001) Tenth International Symposium on Silicon-on-Insulator Technology and Devices — Location: Washington, DC (USA) (25.March.2001)
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Iniguez, B., Rauly, E., & Flandre, D. (2001). Potential of surface accumulation mode for deep-submicron fully-depleted SOI CMOS technologies. Electrochemical Society. Proceedings, 2001(3), 251-258. https://hdl.handle.net/2078.5/252696 (Original work published 2001)