Extraction of charge trapping parameters in FD SOI MOSFET oxides subjected to gamma-irradiation

Houk, Youri;Nazarov, Alexei;Turchanikov, V.I.;Lysenko, V.S.;Flandre, Denis;et.al.
(2005) First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2005) — Location: Granada (Spain) (19.January.2005)

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  • Houk, YouriNational Academy of sciences of Ukraine
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  • Nazarov, AlexeiNational Academy of sciences of Ukraine
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  • Turchanikov, V.I.Institute of Semiconductor Physics, Ukraine
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  • Lysenko, V.S.Lashkarov Institute of Semiconductor Physics, Ukraine
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  • Adriaensen, StéphaneUCLouvain
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  • Flandre, DenisUCLouvain
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Houk, Y., Nazarov, A., Turchanikov, V. I., Lysenko, V. S., Adriaensen, S., & Flandre, D. (2005). Extraction of charge trapping parameters in FD SOI MOSFET oxides subjected to gamma-irradiation. Proceedings of the First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2005), 87-88. https://hdl.handle.net/2078.5/252680