C-infinity-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs
(2006) Solid-State Electronics — Vol. 50, n° 7-8, p. 1261-1268 (2006)
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- Authors
- Abstract
- A high-temperature physically-based C∞-continuous model of low doped accumulation mode SOI pMOSFETs for all regimes of normal operation is presented. The model is based on explicit expressions of the drain current which have an infinite order of continuity. Short-channel effects have been included. The calculated characteristics show good agreement with the measurements for temperatures up to 300 °C with smooth transitions between regions of operation.
- Affiliations
Lashkaryov Institute of Semiconductor Physics (ISP), Kyiv Universitat Rovira i Virgili (URV)
Citations
Houk, Y., Iniguez, B., Flandre, D., & Nazarov, A. (2006). C-infinity-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs. Solid-State Electronics, 50(7-8), 1261-1268. https://doi.org/10.1016/j.sse.2006.04.046 (Original work published 2006)