New Memory Effect for Fully Depleted SOI MOSFETs
(2005) First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2005) — Location: Granada (Spain) (19.January.2005)
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- Abstract
- We demonstrate that the transconductance and drain current of fullydepleted MOSFETs can display an interesting time-dependent hysteresis. This newmemoryeffect, called meta-stable dip (MSD), is mainly due to the long carrier generation lifetime in the silicon film. Our parametric analysis shows that the memory window can be adjusted in view of practical applications. Various measurement conditions and devices with different doping, front oxide and silicon film thicknesses are systematically explored. The MSD effect can be generalized to several fullydepleted CMOS technologies. The MSD mechanism is discussed and validated by two-dimensional simulations results.
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Citations
Bawedin, M., Cristoloveanu, S., Yun, J. G., & Flandre, D. (2005). New Memory Effect for Fully Depleted SOI MOSFETs. Proceedings of the First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2005), 45-46. https://doi.org/10.1016/j.sse.2005.07.019