Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation

Novo, Carla;Baptista, Joao;Guazzeli da Silveira, Marcilei;Giacomini, Renato;Flandre, Denis;et.al.
(2015) ECS transactions — Vol. 66, n° 5, p. 101-107 (2015)

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Authors
  • Novo, CarlaCentro Universitario da FEI, Brazil
    Author
  • Baptista, JoaoCentro Universitario da FEI, Brazil
    Author
  • Guazzeli da Silveira, MarcileiCentro Universitario da FEI, Brazil
    Author
  • Giacomini, RenatoCentro Universitario da FEI, Brazil
    Author
  • Flandre, DenisUCLouvain
    Author
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Abstract
This paper addresses, for the first time, an analysis of the total quantum efficiency of lateral SOI PIN photodiodes with different intrinsic lengths in the 300 to 500 K range simultaneously considering back-gate bias and temperature influences. Experimental results showed that the mode of operation changes the behavior of the devices concerning dark and photocurrents, while the temperature variation produces different trades in quantum efficiency related to the absorption length and the diffusion length variation.
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Novo, C., Baptista, J., Guazzeli da Silveira, M., Giacomini, R., Afzalian, A., & Flandre, D. (2015). Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation. ECS transactions, 66(5), 101-107. https://doi.org/10.1149/06605.0101ecst (Original work published 2015)