A physically-based continuous model for graded-channel SOI MOSFET
(2002) XVII SBMicro Microelectronics Technology and Devices (ECS 2002) — Location: Brazilia (Brazil) (2002)
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Pavanello, M. A., Iniguez, B., Flandre, D., & Martino, J. A. (2002). A physically-based continuous model for graded-channel SOI MOSFET. Proceedings of the XVII SBMicro Microelectronics Technology and Devices (ECS 2002), p. 35-44. https://hdl.handle.net/2078.5/252636