Towards Ultra-Low-Voltage Wideband Noise-Cancelling LNAs in 28nm FDSOI
(2015) IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2015) — Location: Rohnert Park, California (USA) (5.October.2015)
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TowardsUltra-Low-VoltageWidebandNoise-CancellingLNAsin28nmFDSOI.pdf
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- Abstract
- Software-defined and reconfigurable radio (SDR) architectures covering bands up to 6-GHz have recently drawn strong research attention for future wireless communications. These radios impose heavy Low Noise Amplifier (LNA) requirements over a wide frequency range. In order to be integrated in complex Systems-on-a-Chip (SoCs), such LNAs should also be implemented in advanced CMOS technologies to follow SoC development trends while benefiting from the high fT and fmax available with technology scaling [1]. In this work, we study the potential of 28nm FDSOI for operating inductorless wideband LNAs at Ultra-Low-Voltage (ULV) through a sizing framework combining extensive design space exploration and small signal modelling.
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Citations
de Streel, G., Flandre, D., Dehollain, C., & Bol, D. (2015). Towards Ultra-Low-Voltage Wideband Noise-Cancelling LNAs in 28nm FDSOI. Proceedings of IEEE S3S, 2. https://doi.org/10.1109/S3S.2015.7333487