Ultra Low-Power design techniques using special SOI MOS diodes
(2003) 2003 IEEE International SOI Conference — Location: Newport Beach (USA) (29.September.2003)
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- Abstract
- In this paper, we propose new design techniques to reduce static dissipation by using transistors in very weak inversion regimes. Two practical applications are considered: level keepers for Multi-threshold CMOS circuits (MTCMOS) and charge pump circuits.
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Citations
Levacq, D., Liber, C., Dessard, V., & Flandre, D. (2003). Ultra Low-Power design techniques using special SOI MOS diodes. Proceedings of the 2003 IEEE International SOI Conference, 19-20. https://doi.org/10.1109/SOI.2003.1242881