Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems
(2001) European Meeting on Silicon-on-Insulator Devices (EUROSOI-2000) — Location: Granada (Spain) (25.October.2000)
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- Abstract
- Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 mum may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350 degreesC. (C) 2001 Elsevier Science Ltd. All rights reserved.
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Flandre, D., Adriaensen, S., Akheyar, A., Crahay, A., Demeus, L., Delatte, P., Dessard, V., Iniguez, B., Neve, A., Katschmarskyj, B., Loumaye, P., Laconte, J., Martinez, I., Picun, G., Rauly, E., Renaux, C., Spote, D., Zitout, M., Dehan, M., et al. (2001). Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems. Solid-State Electronics, 45(4), 541-549. https://doi.org/10.1016/S0038-1101(01)00084-3 (Original work published 2001)