An Efficient and Accurate Procedure to Evaluate Distortion in SOI FD MOSFET
(2001) 2001 International Semiconductor Device Research Symposium — Location: Washington DC (USA) (5.December.2001)
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- Abstract
- The total harmonic distortion (THD) and the third harmonic distortion (HD3) of the output current-voltage characteristics of SOI FD MOSFET is calculated using a new integral method. The method is based on the calculation of two functions, which we call D and D3 and are based on a specific integration of the DC current-voltage characteristic of the device. We demonstrate that function D can be related with the THD and function D3 with the HD3, so that both THD and HD3 can be determined in a much simpler way, with no need to use derivatives, Fourier coefficients or Fast Fourier Transforms. The new method is applied to calculate the harmonic distortion of a SOI FD MOS transistor in the triode regime, when used as an active resistor at the input of an operational amplifier in a MOSFET-C filter configuration. It is also demonstrated that the values of THD and HD3 obtained in a very simple and straightforward way by our new method have an excellent coincidence with values obtained by calculating Fourier coefficients for experimental, simulated or calculated IDS-VDS characteristics and with AC measured values.
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Cerdeira, A., Quintero, R., Estrada, M., Flandre, D., Ortiz-Conde, A., & Garcia Sanchez, F. J. (2001). An Efficient and Accurate Procedure to Evaluate Distortion in SOI FD MOSFET. Proceedings of the 2001 International Semiconductor Device Research Symposium, 477-478. https://doi.org/10.1109/ISDRS.2001.984549