Meta-Stable DIP (MSD) Effect in Fully-Depleted SOI CMOSFETs

Bawedin, Maryline;Yun, J.G.;Cristoloveanu, Sorin;Lee, H.D.;Flandre, Denis;et.al.
(2005) ECS Meeting, SOI Symposium — Location: Quebec (Canada) (15.May.2005)

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Authors
  • Bawedin, MarylineUCLouvain
    Author
  • Yun, J.G.Chungnam National University
    Author
  • Cristoloveanu, SorinIMEP, Grenoble
    Author
  • Lee, H.D.Chungnam National University
    Author
  • Flandre, DenisUCLouvain
    Author
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Abstract
The I-V characteristics and the transconductance of fully depleted MOSFETs can display time-dependent hysteresis when one interface is scanned to or from accumulation, the other interface being in inversion. This new memory effect, called Meta-Stable Dip (MSD), is mainly due to the high carrier lifetime in the silicon film. In this work, we show that the MSD effect can be generalized to several fully depleted technologies. MSD is systematically analyzed for various measurement conditions and devices with different doping including p-MOSFETs, front oxide thickness and silicon film thicknesses.
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Bawedin, M., Yun, J. G., Cristoloveanu, S., Lee, H. D., Raynau, C., & Flandre, D. (2005). Meta-Stable DIP (MSD) Effect in Fully-Depleted SOI CMOSFETs. Proceedings of the ECS Meeting, SOI Symposium, 51-56.