Potential of SOI intrinsic MOSFETs for ring VCO design
(2003) 2003 IEEE International SOI Conference — Location: Newport Beach (USA) (29.September.2003)
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- Abstract
- In this paper, we study the potential of SOI MOSFETs with non-doped (or intrinsic) channels. We demonstrate that their low threshold voltage (Vt) and enhanced mobility lead to power consumption reduction. Moreover, they present significantly improved linearity.
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Levacq, D., Vancaillie, L., & Flandre, D. (2003). Potential of SOI intrinsic MOSFETs for ring VCO design. Proceedings of the 2003 IEEE International SOI Conference, 17-18. https://doi.org/10.1109/SOI.2003.1242880