MOS-bipolar magnetic field sensor on thin film SOI technologyLosantos, Pere;Cané, Carles;Flandre, Denis;Eggermont, JEAN-PAUL(1997) EUROSENSORS XI — Location: Warsaw (Poland) (21.September.1997)
FilesNo attached file found for this publication.DetailsAuthorsLosantos, PereCentre Nacional de Microelectronica CNM-CSIC, SpainAuthorCané, CarlesCentre Nacional de Microelectronica CNM-CSIC, SpainAuthorFlandre, DenisUCLouvainAuthorEggermont, JEAN-PAULUCLouvainAuthorAffiliationsCentre Nacional de Microelectronica CNM-CSIC, SpainUCLouvainFSA/ELEC - Département d'électricitéShow moreCitations APA Chicago FWB Losantos, P., Cané, C., Flandre, D., & Eggermont, J.-P. (1997). MOS-bipolar magnetic field sensor on thin film SOI technology. Proceedings of EUROSENSORS XI, 271-274. https://hdl.handle.net/2078.5/252596