Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires

Afzalian, Aryan;Flandre, Denis
(2012) IEEE Electron Device Letters — Vol. 33, n° 9, p. 1228-1230 (2012)

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Abstract
The impact of discrete random dopant fluctuations on 10-nm-long high-performance Schottky-barrier (SB) dopant-segregated (DS) nanowire MOSFETs is investigated through nonequilibrium Green's function quantum simulations. Using DS, nanoscale SB-FETs could outperform standard doped source and drain FETs in terms of Ion/Ioff. By reintroducing dopants in SB, however, variability problems are unavoidable and will be strong, at least for thin-width SB-FETs, because of the dopant influence on the SB profile on which the tunneling current is quite sensitive.
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Afzalian, A., & Flandre, D. (2012). Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires. IEEE Electron Device Letters, 33(9), 1228-1230. https://doi.org/10.1109/LED.2012.2203350 (Original work published 2012)