Experimental study of thermal coupling effects in FD-SOI MOSFET
(2022) Solid-State Electronics — Vol. 194, n° 108362, p. 4 (2022)
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- Abstract
- This work studies the thermal cross-coupling between two side-by-side FD-SOI MOSFETs separated by two different spacings. Through DC measurements, the temperature increase experienced by a device due to the selfheating of a neighbor one is estimated by making a comparison with hot chuck measurements. The degradation of electrical parameters caused by the operation (i.e. heating) of the neighbor device is also analyzed as a function of the bias applied to (i.e. power dissipated by) the neighbor device.
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Vanbrabant, M., Raskin, J.-P., Flandre, D., & Kilchytska, V. (2022). Experimental study of thermal coupling effects in FD-SOI MOSFET. Solid-State Electronics, 194(108362), 4. https://doi.org/10.1016/j.sse.2022.108362 (Original work published 2022)