Gate Modulated Resonant Tunneling Transistor (RT-FET): Performance Investigation of a Steep Slope, High On-Current device through 3D Non-Equilibrium Green Function simulations

Afzalian, Aryan;Colinge, Jean-Pierre;Flandre, Denis
(2011) Semiconductor-On-Insulator Materials for Nano-Electronics Applications — ISBN: [978-3-642-15867-4], p. 201-214, published

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  • Afzalian, AryanUCLouvain
    Author
  • Colinge, Jean-PierreTyndall National Institute, Univ. Coll. Cork
    Author
  • Flandre, DenisUCLouvain
    Author
Abstract
Performances of a new concept of nanoscale MOSFET, the gate modulated resonant tunneling (RT)-FET, are investigated through 3D non-equilibrium green function simulations enlightening the main physical mechanisms. Modulation by gate voltage of resonant tunneling states induced by channel and additional tunnel barrier(s) enables very low RT-limited Ioff current together with high thermionic Ion current. A region of subthreshold slope values as low as 45 mV/dec is achieved just below threshold, enabling a fast transition between off and on regimes. High Ion/Ioff current ratios with low voltage operation and good delay characteristics are predicted. The 10 nm Si RT nanowire investigated here could operate with a supply voltage as low as 0.5 V, Ion/Ioff > 104 (an order of magnitude improvement compared to a classical nanowire) and low leakage.
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Afzalian, A., Colinge, J.-P., & Flandre, D. (2011). Gate Modulated Resonant Tunneling Transistor (RT-FET): Performance Investigation of a Steep Slope, High On-Current device through 3D Non-Equilibrium Green Function simulations. In Semiconductor-On-Insulator Materials for Nano-Electronics Applications (p. p. 201-214). Springer. https://hdl.handle.net/2078.5/252540