Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise
(2010) ECS Transactions — Vol. 31, n° 1, p. 43-50 (2010)
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- Abstract
- A comparison study is made on the high-energy neutron irradiation response of MuGFETs fabricated on Silicon-on-Insulator (SOI) and strained SOI (sSOI) substrates. Both DC and low-frequency noise characteristics have been obtained in linear operation. It is shown that while a pronounced device-to-device variation can be noted, there is no clear impact of the strain on the radiation behavior.
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Simoen, E., Put, S., Claeys, C., Kilchytska, V., Alvarado Pulido, J. J., & Flandre, D. (2010). Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise. ECS Transactions, 31(1), 43-50. https://doi.org/10.1149/1.3474140 (Original work published 2010)