SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness

Oliveira, Kevin;P. Teixeira, Jennifer;Chen, Wei-Chao;Lontchi Jioleo, Jackson;M. P. Salomé, Pedro;et.al.
(2022) I E E E Journal of Photovoltaics — p. 8 (2022)

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Authors
  • Oliveira, KevinINL – International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
    Author
  • P. Teixeira, JenniferINL – International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
    Author
  • Chen, Wei-ChaoAngström Laboratory,Department of Engineering Sciences, Uppsala University, 75121 Uppsala, Sweden
    Author
  • Lontchi Jioleo, JacksonUCLouvain
    Author
  • Flandre, DenisUCLouvain
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  • M. P. Salomé, PedroINL – International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
    Author
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Abstract
Interface recombination in sub-μm optoelectronics has a major detrimental impact on devices’ performance, showing the need for tailored passivation strategies to reach a technological boost. In this article, SiOx passivation based substrates were de- veloped and integrated into ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. This article aims to understand the impact of a passivation strategy, which uses several SiOx layer thicknesses (3, 8, and 25 nm) integrated into high-performance substrates (HPS). The experimental study is complemented with 3-D lumerical finite-difference time-domain and 2-D Silvaco ATLAS optical and electrical simulations, respectively, to perform a decoupling of optical and electronic gains, allowing for a deep discussion on the impact of the SiOx layer thickness in the CIGS solar cell performance. This article shows that as the passivation layer thickness increases, a rise in parasitic losses is observed. Hence, a balance between beneficial passivation and optical effects with harmful architectural constraints defines a threshold thickness to attain the best solar cell performance. Analyzing their electrical parameters, the 8-nm novel SiOx based substrate achieved a light to power conversion efficiency value of 13.2%, a 1.3% absolute improvement over the conventional Mo substrate (without SiOx).
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Oliveira, K., P. Teixeira, J., Chen, W.-C., Lontchi Jioleo, J., J. N. Oliveira, A., Çaha, I., Deepak Francis, L., Flandre, D., Edoff, M., A. Fernandes, P., & M. P. Salomé, P. (2022). SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness. I E E E Journal of Photovoltaics, 8. https://hdl.handle.net/2078.5/252520 (Original work published 2022)