Experimental Validation of the Drain Current Analytical Model of the Fully Depleted Diamond SOI nMOSFETs by Using Paired T-test Statistical Evaluation

Peruzzi, V.V.;Renaux, Christian;Flandre, Denis;Gimenez, S.P.
(2012) ECS Transactions — Vol. 49, n° 1, p. 169-176 (2012)

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Abstract
The focus of this work is to validate the drain current analytical model of the Fully Depleted Diamond SOI nMOSFETs, by applying the paired t-test statistical evaluation with experimental data of the six different samples of integrated circuits containing different Diamond SOI MOSFETs and Conventional ones counterparts. Two parameters are considered in this work: maximum transconductance and saturation drain current. We observe that, for the most cases (worst case is around 85% of the repeatability for the saturation drain current), the Diamond drain current analytical model is capable to reproduce a similar statistical behavior than the one observed for the conventional SOI nMOSFET counterpart, considering the same bias conditions and SOI CMOS manufacturing process of the integrated circuits.
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Peruzzi, V. V., Renaux, C., Flandre, D., & Gimenez, S. P. (2012). Experimental Validation of the Drain Current Analytical Model of the Fully Depleted Diamond SOI nMOSFETs by Using Paired T-test Statistical Evaluation. ECS Transactions, 49(1), 169-176. https://doi.org/10.1149/04901.0169ECST (Original work published 2012)