Modelling of the leakage drain current in accumulation-mode SOI pMOSFETs for high-temperature applications
(2001) Tenth International Symposium on Silicon-on-Insulator Technology and Devices — Location: Washington, DC (USA) (25.March.2001)
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Universidade de São Paulo 1Laboratório de Sistemas Integráveis Universidade de São Paulo Laboratório de Sistemas Integráveis
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Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2001). Modelling of the leakage drain current in accumulation-mode SOI pMOSFETs for high-temperature applications. Electrochemical Society. Proceedings, 2001(3), 233-238. https://hdl.handle.net/2078.5/252493 (Original work published 2001)