Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories
(2011) Nano Letters : a journal dedicated to nanoscience and nanotechnology — Vol. 11, n° 11, p. 4520-4526 (2011)
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- Authors
- Abstract
- We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.
- Affiliations
IEMN/ISEN UMR CNRS 8520 Institut d'Electronique, de Microélectronique et de Nanotechnologie University Stuttgart Institut für Halbleitertechnik Tyndall National Institute University College Cork
Citations
Tang, X., Krzeminski, C., Lecavalier des Etangs-Levallois, A., Chen, Z., Dubois, E., Kasper, E., Karmous, A., Reckinger, N., Flandre, D., Francis, L., Colinge, J.-P., & Raskin, J.-P. (2011). Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories. Nano Letters : a journal dedicated to nanoscience and nanotechnology, 11(11), 4520-4526. https://doi.org/10.1021/nl202434k (Original work published 2011)