A simple leakage drain current model for accumulation-mode SOI nMOSFETs operating up to 300°C

Bellodi, Marcello;Iniguez, Benjamin;Flandre, Denis;Martino, J.A.
(2001) XVI SBMicro, International Conference on Microelectronics and Packaging — Location: Pousada dos Pireneus Resort Pirenopolis, State Goias (Brazil) (10.September.2001)

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  • Bellodi, MarcelloUniversidade de Sao Paulo
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  • Iniguez, BenjaminUCLouvain
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  • Flandre, DenisUCLouvain
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  • Martino, J.A.Centro Universitario da FEI
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Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2001). A simple leakage drain current model for accumulation-mode SOI nMOSFETs operating up to 300°C. In Patrick Verdonck, Carlos Alberto dos Reis Filho, José Camargo da Costa (ed.), Proceedings of the XVI SBMicro, International Conference on Microelectronics and Packaging (pp. 185-188). https://hdl.handle.net/2078.5/252469