A simple leakage drain current model for accumulation-mode SOI nMOSFETs operating up to 300°CBellodi, Marcello;Iniguez, Benjamin;Flandre, Denis;Martino, J.A.
FilesNo attached file found for this publication.DetailsAuthorsBellodi, MarcelloUniversidade de Sao PauloAuthorIniguez, BenjaminUCLouvainAuthorFlandre, DenisUCLouvainAuthorMartino, J.A.Centro Universitario da FEIAuthorAffiliationsUCLouvainFSA/ELEC - Département d'électricitéShow moreCitations