Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation
(2009) International Journal of Numerical Modelling: Electronic Netwoks, Devices and Fields — Vol. 23, p. 88-106 (2009)
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Universitat Rovira i Virgili (URV) Department of Electrical Engineering Centro de Investigacion y Estudios Avazandos del IPN
Citations
Alvarado Pulido, J. J., Iniguez, B., Estrada, M., Flandre, D., & Cerdeira, A. (2009). Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation. International Journal of Numerical Modelling: Electronic Netwoks, Devices and Fields, 23, 88-106. https://doi.org/10.1002/jnm.725 (Original work published 2009)