Measurements, Modelling and Electrical Simulations of Lateral PIN Photodiodes in Thin Film-SOI for High Quantum Efficiency and High Selectivity in the UV range.

Afzalian, Aryan;Flandre, Denis
(2003) 33rd European Solid-State Device Research Conference (ESSDERC 2003) — Location: Estoril (Portugal) (16.September.2003)

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The present paper investigates the influence of the SOI structure and in particular the presence of the buried oxide on the Quantum efficiency vs. wavelength characteristics of fully-depleted thin film silicon-on-insulator (SOI) lateral photodetectors by measurements, modelling and simulations.
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Afzalian, A., & Flandre, D. (2003). Measurements, Modelling and Electrical Simulations of Lateral PIN Photodiodes in Thin Film-SOI for High Quantum Efficiency and High Selectivity in the UV range. Proceedings of the 33rd European Solid-State Device Research Conference (ESSDERC 2003), p. 55-58. https://doi.org/10.1109/ESSDERC.2003.1256809