A physically-based continuous analytical graded-channel SOI nMOSFET model for analog applications
(2002) Fourth IEEE International Caracas Conference on Devices, Circuits and Systems — Location: Aruba (17.April.2002)
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- Abstract
- In this work a continuous model for analog simulation of long-channel Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs is presented. The model is based in a series association of two conventional fully-depleted (FD) SOI nMOSFETs with different characteristics, representing each part of the GC nMOSFET channel region. MEDICI numerical bidimensional simulations and experimental results are used to validate the proposed model.
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Pavanello, M. A., Iniguez, B., Martino, J. A., & Flandre, D. (2002). A physically-based continuous analytical graded-channel SOI nMOSFET model for analog applications. Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems, D030-1 - D030-5. https://doi.org/10.1109/ICCDCS.2002.1004044