Special features of the back-gate effects in ultra-thin body SOI MOSFETs
(2011) Semiconductor-On-Insulator Materials for NanoElectronics Applications — p. 323-343, published
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- Abstract
- Ultra-thin body silicon-on-insulator (SOI) MOSFET is considered to be a strong candidate for ultimate scaling of CMOS technologies, because of its excellent suppression of the short-channel effects, even without the use of channel doping. Apart from undoped ultra-thin silicon body, nowadays SOI MOSFETs also feature ultra-thin gate high-k gate dielectrics and thin buried oxides. These innovating features bring about special electrical properties. In this work, we describe some of these properties revealed via the back-gate effects, including special behaviors of interface coupling, transport properties and gate tunneling currents, which may be beneficial for the back-gate control schemes.
- Affiliations
NAS of Ukraine, Kiev Institute of Semiconductor Physics
Citations
Rudenko, T., Kilchytska, V., Raskin, J.-P., Nazarov, A., & Flandre, D. (2011). Special features of the back-gate effects in ultra-thin body SOI MOSFETs. In Nazarov, A., Colinge, J.-P., Balestra, F., Raskin, J.-P., Gamiz, F., Lysenko, V.S. (Eds.) (ed.), Semiconductor-On-Insulator Materials for NanoElectronics Applications (p. p. 323-343). Springer-Verlag. https://hdl.handle.net/2078.5/252428