Stochastic Nonlinear Dynamical Modelling of SRAM Bitcells in Retention Mode
(2024) 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) — Location: Bangalore, India (3.March.2024)
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- Abstract
- SRAM bitcells in retention mode behave as autonomous stochastic nonlinear dynamical systems. From observation of variability-aware transient noise simulations, we provide an unidimensional model, fully characterizable by conventional deterministic SPICE simulations, insightfully explaining the mechanism of intrinsic noise-induced bit flips. The proposed model is exploited to, first, explain the reported inaccuracy of existing closed-form near-equilibrium formulas aimed at predicting the mean time to failure and, secondly, to propose a closer estimate attractive in terms of CPU time.
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Van Brandt, L., Flandre, D., & Delvenne, J.-C. (2024). Stochastic Nonlinear Dynamical Modelling of SRAM Bitcells in Retention Mode. IEEE Xplore. Published. 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Bangalore, India. https://doi.org/10.1109/edtm58488.2024.10512067