Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode

Rudenko, Tamara;Collaert, Nadine;De Gendt, S.;Kilchytska, Valeriya;Flandre, Denis;et.al.
(2005) Microelectronic Engineering — Vol. 80, p. 386-389 (2005)

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Abstract
In this work, the effective mobility in n- and p-channel FinFETS with silicon oxynitride and HfO2 gate dielectrics and TaN gate electrode is studied as a function of the inversion charge density using a split C-V technique. The mobility behavior in narrow-fin devices is compared to that in quasi-planar wide-fin devices, and the mechanisms responsible for the observed differences are discussed. The devices with HfO2 and silicon oxynitride gate dielectrics exhibit similar mobility behavior.
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Rudenko, T., Collaert, N., De Gendt, S., Kilchytska, V., Jurczak, M., & Flandre, D. (2005). Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode. Microelectronic Engineering, 80, 386-389. https://doi.org/10.1016/j.mee.2005.04.026 (Original work published 2005)