Modeling of current-voltage characteristics of high-efficiency kesterite solar cells
(2025) Newton — Vol. 1, n° 7, p. 100198 (2025)
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Scaffidi, Romain 
- Abstract
- The recent developments in baselines for kesterite photovoltaic absorbers raise the need for an update of the models used to understand their current-voltage behavior. In particular, the large efforts devoted to mitigating band tailing and control defect formation via molecular ink routes provide kesterite compounds with a more ideal optoelectronic landscape. This study demonstrates, via a robust analysis procedure of temperature- and light-intensity-dependent current-voltage measurements, that such material enhancements translate into a closer-to-ideal response of kesterite devices within the single diode formalism. Excellent model agreement is reached in the dark for a broad temperature range, allowing one to draw solid hypotheses about the main recombination channels. Remarkably, these observations can be reconciled with the sample response under light, implying strategies for future performance gains. Eventually, dark reverse currents reveal that shunt leakages, especially critical for indoor applications, may actually originate in shallow defect states rather than classical ohmic conduction
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Citations
Scaffidi, R., Jimenez-Arguijo, A., Gong, Y., Brammertz, G., Basak, A., Jehl Li-Kao, Z., Saucedo, E., Flandre, D., & Vermang, B. (2025). Modeling of current-voltage characteristics of high-efficiency kesterite solar cells. Newton, 1(7), 100198. https://doi.org/10.1016/j.newton.2025.100198 (Original work published 2025)